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Samsung 990 EVO Plus 1 TB M.2 PCI Express 4.0 NVMe V-NAND TLC

In stock
Only 4 left
SKU
15704082
$336.00
Eligible for Free Shipping & Free Returns
MPN
MZ-V9S1T0B/AM
UPC
887276843711
About this item
1 TB, PCIe 4.0 x4 / 5.0 x2 NVMe 2.0, M.2 (2280), V NAND TLC (V8)

Faster Performance. Massive Storage

With faster read/write speeds, larger storage capacity and more efficient power/thermal control than the 990 EVO, the 990 EVO Plus is the perfect productivity boost to help you tackle a busy day.

Blast through tasks faster
Read/Write Speeds up to 7,250/6,300 MB/s
The 990 EVO Plus features the latest NAND memory, boosting sequential read/write speeds up to 7,250/6,300MB/s. Ideal for huge file transfers and finishing tasks faster than ever.


Process massive data faster and breeze through
heavy graphics
Up to 4TB Capacity

Harness the full power of your drive with our first ever 4TB DRAMless SSD, featuring the enhanced performance of Intelligent TurboWrite 2.0. The 990 EVO plus is the ideal booster for handling large files and complex graphics, ensuring smooth and fast performance every time.


Extend battery life by using less power
Power Efficiency & Thermal Control

Keep your cool as you work—or play—with no worries about overheating or battery life. The efficiency-boosting nickel-coated controller allows the 990 EVO Plus to utilize less power while achieving similar performance.


Latest PCIe technology
PCIe 4.0 and Gen 5.0

Optimized to support the latest technology for SSDs—990 EVO Plus is compatible with PCIe 4.0 x4 and PCIe 5.0 x2. This means you get more bandwidth and higher data processing and performance.


Works like magic
Always Up-to-Date via Magician Software

It’s not hocus-pocus. Your 990 EVO Plus SSD performs like new with the always up-to-date Magician Software. With firmware updates, extra encryption and continual monitoring of your drive health, it works like a charm.


World's No. 1 Flash Memory Brand

Experience the performance and reliability that you can only get from the world's number one brand for flash memory since 2003. All firmware and components, including Samsung's world-renowned DRAM and NAND, are produced in-house, allowing end-to-end integration for quality you can trust.
Specifications
Performance
Solid-state drive capacity 1000 GB
Read speed 7150 MB/s
Write speed 6300 MB/s
NVM Express (NVMe) supported
NVM Express (NVMe) version 2.0
Memory type V-NAND TLC
Random read (4KB) 850000 IOPS
Random write (4KB) 1350000 IOPS
Security algorithms 256-bit AES
Hardware encryption
S.M.A.R.T. support
TRIM support
Component for PC/Notebook
TBW rating 600
Mean time between failures (MTBF) 1500000 h
Design
SSD form factor M.2
Power
Power consumption (read) 4.3 W
Power consumption (write) 4.2 W
Power consumption (idle) 0.06 W
Features
Interface PCI Express 4.0
M.2 SSD size 2280 (22 x 80 mm)
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95 %
Storage relative humidity (H-H) 5 - 95 %
Non-operating shock 1500 G
Vibration resistance 20 G
Weight & dimensions
Width 80.15 mm (3.13 ")
Depth 22.15 mm (0.86 ")
Height 2.38 mm (0.09 ")
Packaging data
Package type Hanging box
Other features
Warranty period 5 year(s)
CE, Federal Communications Commission (FCC), KCC
Note: Please be aware that availability, promotions, and descriptions may change without notice, but you can feel confident knowing that the price for MZ-V9S1T0B/AM by Samsung you see now, is the price you pay. If you have any questions, our customer care team is available to assist you.

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